Výkonový MOSFET, 2m 1250W out CW – MRFE6VP61K25HR5 High Ruggedness N–Channel Enhancement–Mode Lateral MOSFETs
4500 Kč
Nový, originál balení od výrobce (koupeno v USA)
Datový list a zapojení zesilovače pro 2m / 1250W CW out: MRFE6VP61K25HR5
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
High Ruggedness N–Channel Enhancement–Mode Lateral MOSFETs
These high ruggedness device is designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Typical Performance: V DD = 50 Volts, I DQ = 100 mA
Popis
Výkonový MOSFET, vhodný pro PA 2m, výkon až 1250W při CW.
Nový, originál balení od výrobce, koupeno v USA
Datový list a zapojení zesilovače pro 2m / 1250W CW out: MRFE6VP61K25HR5
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
High Ruggedness N–Channel
Enhancement–Mode Lateral MOSFETs
These high ruggedness device is designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Typical Performance: V DD = 50 Volts, I DQ = 100 mA
Recenze
Zatím zde nejsou žádné recenze.